Simultaneous effects of hydrostatic pressure and electric field on impurity binding energy and polarizability in coupled InAs/GaAs quantum wires
Identifieur interne : 002558 ( Main/Repository ); précédent : 002557; suivant : 002559Simultaneous effects of hydrostatic pressure and electric field on impurity binding energy and polarizability in coupled InAs/GaAs quantum wires
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Abstract
This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. Calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a non-linear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum-well wires.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Simultaneous effects of hydrostatic pressure and electric field on impurity binding energy and polarizability in coupled InAs/GaAs quantum wires</title><author><name sortKey="Tangarife, E" uniqKey="Tangarife E">E. Tangarife</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto de Física, Universidad de Antioquia</s1><s2>AA 1226 Medellin</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>AA 1226 Medellin</wicri:noRegion></affiliation></author><author><name sortKey="Duque, C A" uniqKey="Duque C">C. A. Duque</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto de Física, Universidad de Antioquia</s1><s2>AA 1226 Medellin</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>AA 1226 Medellin</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0125432</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0125432 INIST</idno><idno type="RBID">Pascal:11-0125432</idno><idno type="wicri:Area/Main/Corpus">003542</idno><idno type="wicri:Area/Main/Repository">002558</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binding energy</term><term>Donor center</term><term>Effective mass model</term><term>Electric field effects</term><term>Electron-phonon interactions</term><term>Gallium arsenides</term><term>Hydrostatic pressure</term><term>Impurity states</term><term>Indium arsenides</term><term>Polarizability</term><term>Quantum wells</term><term>Quantum wires</term><term>Variational methods</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pression hydrostatique</term><term>Effet champ électrique</term><term>Modèle masse effective</term><term>Energie liaison</term><term>Etat impureté</term><term>Centre donneur</term><term>Polarisabilité</term><term>Méthode variationnelle</term><term>Interaction électron phonon</term><term>Arséniure d'indium</term><term>Arséniure de gallium</term><term>Fil quantique</term><term>Puits quantique</term><term>InAs</term><term>GaAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. Calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a non-linear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum-well wires.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>406</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Simultaneous effects of hydrostatic pressure and electric field on impurity binding energy and polarizability in coupled InAs/GaAs quantum wires</s1></fA08><fA11 i1="01" i2="1"><s1>TANGARIFE (E.)</s1></fA11><fA11 i1="02" i2="1"><s1>DUQUE (C. A.)</s1></fA11><fA14 i1="01"><s1>Instituto de Física, Universidad de Antioquia</s1><s2>AA 1226 Medellin</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>952-956</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000194391250440</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0125432</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. Calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a non-linear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum-well wires.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C21H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Pression hydrostatique</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Hydrostatic pressure</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Effet champ électrique</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electric field effects</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Modèle masse effective</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Effective mass model</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Modelo masa efectiva</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Energie liaison</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Binding energy</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etat impureté</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Impurity states</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Centre donneur</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Donor center</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Centro dador</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Polarisabilité</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Polarizability</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Méthode variationnelle</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Variational methods</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Interaction électron phonon</s0><s5>12</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Electron-phonon interactions</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Fil quantique</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Quantum wires</s0><s5>17</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Puits quantique</s0><s5>18</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Quantum wells</s0><s5>18</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>080</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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